stop productionRapid recovery=< 500ns,> 200mA(Io)3 µA @ 600 V-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Diode rectifier

Total: 7

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 4A POWERFLAT

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 4A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 4A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 4A DO15

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 3A DPAK

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 600V 3A DPAK

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

TR

TR,CT

TB

CT,pipe

series

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

600 V

Current average rectification (Io)

4A

3A

Voltage at different If - forward (Vf)

1.3 V @ 3 A

1.7 V @ 4 A

Reverse recovery time (trr)

50 ns

75 ns

85 ns

Current - reverse leakage at different Vr

3 µA @ 600 V

Capacitance at different Vr and F

-

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