Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
bulk
TR,CT,bulk
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
1A
530 mV @ 1 A
10 ns
15 µA @ 16 V
27pF @ 10V,1MHz