Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,bulk
stop production
Not applicable to new design
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
2A
400 mV @ 2 A
20 ns
1.25 mA @ 15 V
75pF @ 10V,1MHz