Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
170 V
8A(DC)
890 mV @ 8 A
-
30 µA @ 170 V
237pF @ 1V,1MHz