Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
10 V
4A
500mA
500 mV @ 4 A
340 mV @ 100 mA
-
150 µA @ 10 V
55pF @ 0V,1MHz