Total: 7
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
Level barrier
40 V
30 V
250mA(DC)
200mA
120mA
1 V @ 200 mA
750 mV @ 100 mA
610 mV @ 200 mA
5 ns
2 µA @ 30 V
-
10pF @ 1V,1MHz
6pF @ 0V,1MHz
6pF @ 1V,1MHz