TRRapid recovery=< 500ns,> 200mA(Io)50 V30 ns1 mA @ 50 V-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Category

Diode rectifier

Total: 3

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Installation type

Through-Hole

packing

series

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Schottky barrier

Voltage DC reverse (Vr) (maximum)

50 V

Current average rectification (Io)

Voltage at different If - forward (Vf)

580 mV @ 1 A

Reverse recovery time (trr)

30 ns

Current - reverse leakage at different Vr

1 mA @ 50 V

Capacitance at different Vr and F

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