Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
bulk
TR,CT
POWERMITE®
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
Level barrier
20 V
1A
200mA
450 mV @ 1 A
470 mV @ 200 mA
-
40 µA @ 20 V