Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
1.5A(DC)
580 mV @ 1.5 A
25 ns
80 µA @ 30 V
60pF @ 0V,1MHz