Total: 18
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
CT
TR,TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
20 V
30 V
200mA
350mA(DC)
350mA
600 mV @ 200 mA
500 mV @ 200 mA
-
10 ns
5 µA @ 20 V
50pF @ 0V,1MHz
28pF @ 0V,1MHz