Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
Automotive, AEC-Q101
SBR®
TrenchSBR®
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
Level barrier
20 V
500mA
385 mV @ 500 mA
500 mV @ 500 mA
390 mV @ 500 mA
-
6 ns
50 µA @ 20 V
14pF @ 20V,1MHz