Through-Hole Rapid recovery=< 500ns,> 200mA(Io)Schottky barrier5 µA @ 10 V-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Through-Hole

packing

TR,CT

CT,TB

series

Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Schottky barrier

Voltage DC reverse (Vr) (maximum)

20 V

Current average rectification (Io)

350mA(DC)

Voltage at different If - forward (Vf)

600 mV @ 200 mA

Reverse recovery time (trr)

10 ns

Current - reverse leakage at different Vr

5 µA @ 10 V

Capacitance at different Vr and F

50pF @ 0V,1MHz