Total: 11
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
45 V
3A
10A
5A
600 mV @ 5 A
480 mV @ 3 A
470 mV @ 10 A
-
280 µA @ 45 V