Total: 8
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
CT,TB
Automotive, AEC-Q101
Automotive, AEC-Q101, SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
60 V
1A
3A
600 mV @ 3 A
530 mV @ 1 A
620 mV @ 3 A
-
60 µA @ 60 V
110pF @ 4V,1MHz
48pF @ 10V,1MHz