Total: 7
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
TR,CT,bulk
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
40 V
30 V
1A
500mA(DC)
15A
2A(DC)
500 mV @ 2 A
500 mV @ 500 mA
650 mV @ 1 A
490 mV @ 15 A
-
5.5 ns
300 µA @ 30 V
15pF @ 5V,1MHz
50pF @ 25V,1MHz
400pF @ 30V,1MHz