Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
SBR®
Automotive, AEC-Q101, SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Level barrier
45 V
10A
550 mV @ 10 A
-
450 µA @ 45 V
500pF @ 4V,1MHz