Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
TrenchSBR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
Level barrier
100 V
3A
20A
790 mV @ 3 A
700 mV @ 20 A
-
300 µA @ 100 V
105pF @ 4V,1MHz