Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
5A
9A
480 mV @ 9 A
570 mV @ 18 A
450 mV @ 5 A
-
800 µA @ 30 V
900pF @ 4V,1MHz
330pF @ 10V,1MHz