Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
SBR®
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Level barrier
10 V
2A
460 mV @ 2 A
60 ns
2 mA @ 10 V
102pF @ 5V,1MHz