Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
70 V
3A
790 mV @ 3 A
-
100 µA @ 70 V
105pF @ 4V,1MHz