Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
100 V
1A
770 mV @ 1 A
-
350 nA @ 100 V
36pF @ 5V,1MHz