Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR
CT,TB
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
150 V
2A
820 mV @ 2 A
-
1.5 µA @ 150 V