Total: 6
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
1A
1.5A
350mA(DC)
570 mV @ 1 A
750 mV @ 200 mA
640 mV @ 1.5 A
-
10 ns
25 µA @ 40 V
20pF @ 0V,1MHz
30pF @ 0V,1MHz
130pF @ 0V,1MHz