Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
25 V
2A
3A
450 mV @ 2 A
490 mV @ 3 A
-
90 µA @ 25 V