Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
1A
450 mV @ 700 mA
-
30 µA @ 20 V
40pF @ 10V,1MHz