Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR,CT
bulk,pipe
CoolSiC™+
On sale
Standard recovery>500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
1200 V
2A(DC)
100A
31.9A(DC)
11.8A(DC)
1.8 V @ 10 A
1.65 V @ 2 A
2.05 V @ 100 A
-
0 ns
18 µA @ 1200 V
525pF @ 1V,1MHz
182pF @ 1V,1MHz