-30 mA @ 1200 V-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Diode rectifier

Total: 4

Brand：Infineon

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 1.2KV 255A

Brand：Infineon

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 1.2KV 255A

Brand：Infineon

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 1.2KV 770A

Brand：Infineon

Store: ShenZhen/Hongkong

Description：DIODE GP 1.2KV 350A BG-PB50ND-1

Price：1+

￥206.31

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Base installation

Terminal installation

packing

bulk

pallet

series

Part status

On sale

stop production

Speed

Standard recovery>500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

1200 V

Current average rectification (Io)

350A

770A

255A

Voltage at different If - forward (Vf)

-

1.08 V @ 400 A

Reverse recovery time (trr)

-

Current - reverse leakage at different Vr

30 mA @ 1200 V

Capacitance at different Vr and F

-

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