Total: 15
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
20 V
100 V
80 V
50 V
200 V
600 V
150 V
70 V
90 V
1A
2A
6A
450 mV @ 1 A
950 mV @ 2 A
1.2 V @ 6 A
790 mV @ 2 A
-
50 ns
250 ns
1 mA @ 20 V
5 µA @ 100 V
10 µA @ 600 V
5 µA @ 200 V
5 µA @ 50 V
5 µA @ 150 V
7 µA @ 100 V
7 µA @ 90 V
7 µA @ 80 V
7 µA @ 70 V
70pF @ 4V,1MHz