Total: 6
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
20 V
200mA
500mA
700mA
385 mV @ 500 mA
550 mV @ 700 mA
500 mV @ 500 mA
480 mV @ 200 mA
-
50 µA @ 20 V