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Diode rectifier

Total: 10

1N4934G-T
Brand：Diodes
Stock：21878
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 1A DO41
Offer
Price：1+
￥0.54
UFS180JE3/TR13
Brand：Microchip
Stock：7653
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 800V 1A DO214BA
Offer
Price：1+
￥1.10
1N4936RL
Brand：ON
Stock：29317
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 400V 1A DO41
Offer
1N4935RL
Brand：ON
Stock：54542
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 1A DO41
Offer
1N4933RL
Brand：ON
Stock：49369
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 1A DO41
Offer
1N4935RLG
Brand：ON
Stock：26468
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 200V 1A DO41
Offer
Price：1+
￥0.12
1N4937RLG
Brand：ON
Stock：67277
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 600V 1A DO41
Offer
Price：1+
￥0.12
1N4934RLG
Brand：ON
Stock：17894
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 100V 1A DO41
Offer
Price：1+
￥0.43
1N4933RLG
Brand：ON
Stock：48085
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 50V 1A DO41
Offer
Price：1+
￥0.40
1N4936RLG
Brand：ON
Stock：20179
Store: ShenZhen/Hongkong
Description：DIODE GEN PURP 400V 1A DO41
Offer
Price：1+
￥0.23
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

TR,CT

series
Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

100 V

50 V

200 V

400 V

600 V

800 V

Current average rectification (Io)

1A

Voltage at different If - forward (Vf)

1.2 V @ 1 A

Reverse recovery time (trr)

300 ns

60 ns

200 ns

Current - reverse leakage at different Vr

5 µA @ 100 V

5 µA @ 600 V

5 µA @ 400 V

5 µA @ 200 V

5 µA @ 50 V

20 µA @ 800 V

Capacitance at different Vr and F

-

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