Total: 29
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Surface mount
CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
20 V
40 V
200 V
30 V
35 V
15 V
1A
8A
1.5A
2A
3A
5A
25A
600 mV @ 1 A
980 mV @ 1 A
510 mV @ 8 A
550 mV @ 2 A
510 mV @ 1 A
450 mV @ 3 A
450 mV @ 25 A
460 mV @ 1.5 A
395 mV @ 1 A
370 mV @ 5 A
360 mV @ 1 A
360 mV @ 1.5 A
370 mV @ 3 A
400 mV @ 3 A
35 ns
1 mA @ 40 V
1 mA @ 30 V
200 µA @ 20 V
50 µA @ 30 V
10 µA @ 200 V
500 µA @ 40 V
100 µA @ 40 V
500 µA @ 30 V
1.4 mA @ 35 V
15 mA @ 15 V
1.5 mA @ 30 V
5 mA @ 30 V
8 mA @ 30 V