Rapid recovery=< 500ns,> 200mA(Io)-100 ns2.2 V @ 8 ATURBOSWITCH™-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Through-Hole

packing

pipe

series

TURBOSWITCH™

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

1200 V

Current average rectification (Io)

8A

Voltage at different If - forward (Vf)

2.2 V @ 8 A

Reverse recovery time (trr)

100 ns

Current - reverse leakage at different Vr

100 µA @ 1200 V

Capacitance at different Vr and F

-