Total: 7
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TB
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
60 V
3A
680 mV @ 3 A
-
500 µA @ 60 V