Through-Hole Rapid recovery=< 500ns,> 200mA(Io)Schottky barrier20pF @ 0V,1MHz-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Through-Hole

packing

TR,CT

series

Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Schottky barrier

Voltage DC reverse (Vr) (maximum)

20 V

40 V

Current average rectification (Io)

350mA(DC)

Voltage at different If - forward (Vf)

1 V @ 300 mA

750 mV @ 200 mA

Reverse recovery time (trr)

-

Current - reverse leakage at different Vr

10 µA @ 20 V

25 µA @ 40 V

Capacitance at different Vr and F

20pF @ 0V,1MHz