Total: 11
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
standard
Schottky barrier
100 V
30 V
70 V
15 V
8 V
200mA(DC)
215mA(DC)
1A(DC)
70mA(DC)
50mA
10mA(DC)
1.25 V @ 150 mA
1 V @ 10 mA
350 mV @ 1 mA
1.1 V @ 50 mA
960 mV @ 15 mA
570 mV @ 10 mA
4 ns
-
700 ps
1 ns
1.6 ns
500 nA @ 80 V
200 nA @ 35 V
10 µA @ 70 V
50 nA @ 20 V
100 nA @ 1 V
230 nA @ 15 V
1pF @ 0V,1MHz