Rapid recovery=< 500ns,> 200mA(Io)60pF @ 4V,1MHz-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Diode rectifier

Total: 8

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 400V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 200V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 100V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 50V 3A DO201AD

Store: ShenZhen/Hongkong

Description：DIODE SCHOTTKY 40V 1A SOD123

Store: ShenZhen/Hongkong

Description：DIODE SCHOTTKY 40V 1A SOD123

Price：1+

￥0.59

Store: ShenZhen/Hongkong

Description：UFR TO277 PN 6A 400V

Price：1+

￥0.54

Store: ShenZhen/Hongkong

Description：UFR TO277 PN 6A 200V

Price：1+

￥0.54

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

TR

TR,CT

series

Automotive, AEC-Q101

Part status

On sale

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Schottky barrier

Voltage DC reverse (Vr) (maximum)

100 V

40 V

50 V

200 V

400 V

Current average rectification (Io)

1A

3A

6A

Voltage at different If - forward (Vf)

450 mV @ 1 A

-

950 mV @ 3 A

1.25 V @ 3 A

Reverse recovery time (trr)

-

50 ns

45 ns

Current - reverse leakage at different Vr

1 mA @ 40 V

5 µA @ 100 V

2 µA @ 200 V

5 µA @ 400 V

5 µA @ 200 V

5 µA @ 50 V

2 µA @ 400 V

Capacitance at different Vr and F

60pF @ 4V,1MHz

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