TRRapid recovery=< 500ns,> 200mA(Io)50 V45pF @ 4V,1MHz-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

TR

series

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Schottky barrier

Voltage DC reverse (Vr) (maximum)

50 V

Current average rectification (Io)

1A

Voltage at different If - forward (Vf)

650 mV @ 1 A

Reverse recovery time (trr)

-

Current - reverse leakage at different Vr

200 µA @ 60 V

100 µA @ 50 V

Capacitance at different Vr and F

45pF @ 4V,1MHz