Total: 26
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
TR,CT,bulk
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
80 V
40 V
200 V
30 V
150 V
70 V
125 V
180 V
250mA(DC)
200mA
500mA
100mA
1 V @ 100 mA
1 V @ 10 mA
1 V @ 200 mA
750 mV @ 100 mA
1.15 V @ 300 mA
1 V @ 150 mA
1.3 V @ 100 mA
-
5 ns
60 ns
1 nA @ 125 V
25 nA @ 175 V
25 nA @ 60 V
3 nA @ 125 V
25 nA @ 180 V
2 µA @ 30 V
100 nA @ 120 V
10 µA @ 30 V
10 nA @ 80 V
6pF @ 0V,1MHz