Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
Schottky barrier
30 V
150 V
500mA
100mA(DC)
100mA
800 mV @ 100 mA
750 mV @ 100 mA
710 mV @ 500 mA
-
10 ns
4.8 ns
50 µA @ 75 V
1 µA @ 25 V
9 µA @ 30 V
7pF @ 10V,1MHz