Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
40 V
30 V
3A
500 mV @ 3 A
-
200 µA @ 20 V
200 µA @ 30 V
200 µA @ 40 V
100 µA @ 20 V
140pF @ 4V,1MHz