Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,bulk
Not applicable to new design
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
3A
420 mV @ 3 A
20 ns
1.4 mA @ 15 V
90pF @ 10V,1MHz