Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
1.5A(DC)
590 mV @ 1.5 A
33 ns
75 µA @ 40 V
85pF @ 2V,1MHz