Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
bulk
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
1A
2A
450 mV @ 1 A
550 mV @ 2 A
370 mV @ 3 A
-
20 ns
500 µA @ 30 V
100 µA @ 15 V
1.5 mA @ 30 V
70pF @ 10V,1MHz