Total: 18
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
bulk
TR
TB
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
100 V
50 V
200 V
400 V
150 V
300 V
1A
1.3 V @ 1 A
950 mV @ 1 A
35 ns
40 ns
10 µA @ 50 V
10 µA @ 400 V
10 µA @ 200 V
10 µA @ 100 V
10 µA @ 300 V
10 µA @ 150 V
75pF @ 4V,1MHz