Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Surface mount
TR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
200mA
600 mV @ 200 mA
5 µA @ 40 V
5 µA @ 4 V
7pF @ 0V,1MHz