Rapid recovery=< 500ns,> 200mA(Io)Schottky barrier600 mV @ 200 mA7pF @ 0V,1MHz-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Category

Diode rectifier

Total: 1

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

series

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Schottky barrier

Voltage DC reverse (Vr) (maximum)

40 V

Current average rectification (Io)

200mA

Voltage at different If - forward (Vf)

600 mV @ 200 mA

Reverse recovery time (trr)

Current - reverse leakage at different Vr

5 µA @ 40 V

Capacitance at different Vr and F

7pF @ 0V,1MHz

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