Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
Final sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
30 V
3A
500 mV @ 3 A
12.5 ns
12.62 ns
100 µA @ 30 V
100 µA @ 40 V
485pF @ 0V,1MHz