Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
pipe
Automotive, AEC-Q101
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
Schottky barrier
SiC Schottky
1200 V
60 V
8A
15A(DC)
1.8 V @ 15 A
640 mV @ 8 A
-
0 ns
70 µA @ 60 V
305 µA @ 1200 V
870pF @ 1V,1MHz