Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,bulk
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
500mA
470 mV @ 500 mA
10 ns
120 µA @ 5 V
13pF @ 10V,1MHz