Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
TR,bulk
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
10 V
700mA
750mA(DC)
550 mV @ 700 mA
380 mV @ 100 mA
3 ns
10 ns
80 µA @ 15 V
6 µA @ 10 V
26pF @ 10V,1MHz